中文摘要：

我们基于我们的最近的进展报导简单堵住洞的材料(biphenyl-3,3-diyl ) 二度(diphenylphosphine 氧化物)(BiPh-m-BiDPO ) 。复合表演 HOMO/LUMO ~ 6.71/2.51 eV 铺平的二度(磷化氢氧化物) 。它在一部稳固的电影的发磷光的光谱展示在 2.69 和 2.4 eV 达到顶点的二个主要排放乐队，相应于 0-0 和 0-1 电子振动的转变分别地。电子唯一的设备的测量表明 BiPh-m-BiDPO 拥有电子活动性 - 在 E =2- V/cm 的厘米 V s。荧光灯、红的天空蓝色的描述发磷光的大头针当洞 blocker 证明它的浅 LUMO 水平以及低电子活动性显著地影响力量效率和因此运作的稳定性，利用 BiPh-m-BiDPO 的器官的轻射出的二极管( OLED )相对发光效率，特别在高发光性。在有我们的最近的结果的联合，现在的学习在器官的包含 phosphinyl 在分子的结构性质关联上提供深入的卓见堵住洞的材料。

英文摘要：

We report a simple hole-blocking material （biphenyl-3,3＇-diyl）bis（diphenylphosphine oxide） （BiPh-m-BiDPO） based on our recent advance. The bis（phosphine oxide） compound shows HOMO/LUMO levels of ∽-6.71/- 2.51 eV. Its phosphorescent spectrum in a solid film features two major emission bands peaking at 2.69 and 2.4eV, corresponding to 0-0 and 01 vibronic transitions, respectively. The measurement of the electron-only devices reveals that BiPh-m-BiDPO possesses electron mobility of 2.28 × 10^-9-3.22× 10^-8cm2 V-1s-1 at E = 2- 5 × 10^5 V/cm. The characterization of the sky blue fluorescent and red phosphorescent pin organic light-emitting diodes （OLEDs） utilizing BiPh-m-BiDPO as the hole blocker shows that its shallow LUMO level as well as the low electron mobility affects significantly the power efficiency and hence operational stability, relative to the luminous efficiency, especially at high luminance. In combination with our recent results, the present study provides an indepth insight on the molecular structure-property correlation in the organic phosphinyl-containing hole-blocking materials.