中文摘要：

首次在低温下采用磁控射频溅射技术在玻璃衬底上制备出具有多晶结构的掺锑锌-锡-氧（Zn-Sn-O：Sb）透明导电膜。研究了在通氧气氛制备薄膜的特性以及退火处理对制备薄膜结构和光电性能的影响。经真空退火后，氩氧混合气体溅射制备的Zn-Sn-O：Sb透明导电膜的最小电阻率为4×10^-2Ω·cm，相应载流子浓度和霍尔迁移率分别为2．1×10^19cm^-3，8cm^2·V^-1·s^-1。薄膜的可见光平均透过率达到了92．4％。薄膜具有较高的热稳定性和化学稳定性，对玻璃衬底有良好的附着性。

英文摘要：

Polycrystalline Sn-Zn-O ： Sb films are prepared on corning 7059 glass substrates at low-temperature by r. f. magnetron sputtering. The structural, electrical and optical properties of the deposited films have been studied together with the influence of the annealing temperature. The resistivity of the antimony-doped Sn-Zn-O film is 4 × 10^-2Ω·cm, the carrier concentration is 2.1 × 10^19cm^-3 and hall mobility 8cm^2 · V^-1 · s^-1. The average transmittance in the visible region reaches 92.4%.