中文摘要：

对新型条形辐射探测芯片的吸收膜层进行了理论分析,并且在金刚石材质的探测芯片上采用电镀方法制备了镍磷黑吸收膜.辐射探测芯片的膜层吸收分析表明,芯片吸收膜层的吸收率正比于表面粗糙度.通过对辐射吸收膜层设计与制作工艺的研究,制备出一种用于条形辐射探测芯片的镍磷黑吸收膜,通过测量其表面形貌结构,表明该膜层具有50nm—1.5μm范围的微结构;红外吸收测试表明其吸收率在1.4—8μm波段为0.989以上,从而提高了辐射探测芯片的性能.

英文摘要：

The black-nickel film on the flat type radiometer chip was investigated,and a black-nickel film which can be applied in this chip was prepared using electroplating method.The analyses of absorption of radiometer chip indicated that the absorption rate of the chip is proportional to the surface roughness.The black-nickel film was prepared and tested,and surface morphology testing showed that this film has microstructures of the scale 50 nm—1.5 μm.Infrared absorption measurement indicated that the absorptivity of the film in the 1.4—8 μm range is higher than 0.989.This high absorptivity black-nickel film improves the performance of the chip.