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Atomistic simulation study of defects in h-HoMnO3
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2013.4.4
  • 页码：164104-
  • 相关项目：过渡金属掺杂的C/Si薄膜结构中的正负磁阻及正负磁阻转换
作者： Jiang, Ning|Zhang, X.|
同期刊论文项目
过渡金属掺杂的C/Si薄膜结构中的正负磁阻及正负磁阻转换
期刊论文 38 会议论文 28
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