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中文摘要：
以正硅酸乙酯和氧氯化锆为硅源和锆源,去离子水为溶剂,采用溶胶-凝胶法在单晶硅表面制备了硅酸锆薄膜。利用pH计、zeta电位仪、SEM、XRD、AFM等测试手段研究了pH值、前驱体浓度对制备硅酸锆薄膜的影响,并研究了其抗四甲基氢氧化铵（TMAH）/异丙醇（IPA）腐蚀性能。结果表明：优化的pH值为0.5,对应溶胶的zeta电位最大,为43.8m V,所制备的薄膜质量最优;zeta电位随pH值的增加而减小,溶胶的稳定性和薄膜的质量也变差。当前驱体浓度小于0.6mol/L时,薄膜表面粗糙;当前驱体浓度大于0.6 mol/L时,薄膜表面出现了裂纹,且样品出现杂相。最优前驱体浓度为0.6mol/L,制得的硅酸锆薄膜可有效保护单晶硅片免受TMAH/IPA的腐蚀。
英文摘要：
Zirconium silicate film was prepared on the silicon substrate via sol-gel method using tetraethyl orthosilicate as silicon source and zirconium oxychloide as zirconium source, deionized water as solvent. The effect of pH value, precursor concentration and the corrosion resistance of zirconium silicate film against tetramethylammonium hydroxid（TMAH）/isopropyl alcohol（IPA） were studied by means of pH meter, zeta potential meter, SEM, XRD, AFM. The results show that the optimal pH was 0.5 with the largest zeta potential of 43.8 mV and the optimal film. The zeta potential and the quality of the film decrease with the pH value increasing. The film is rough when the concentration is less than 0.6 mol/L; and it is crack with impurity phase when the concentration is more than 0.6 mol/L. The optimal precursor concentration was 0.6 mol/L, and the prepared zirconium silicate film can effectively protect silicon wafer against TMAH/IPA corrosion.
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