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引入IP核的三维FPGA结构研究
  • ISSN号:1000-7180
  • 期刊名称:《微电子学与计算机》
  • 时间:0
  • 分类:TN40[电子电信—微电子学与固体电子学]
  • 作者机构:[1]Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China, [2]University of Chinese Academy of Sciences, Beijing 100049, China
  • 相关基金:Sponsored by the National Natural Science Foundation of China (No. 61271149).
中文摘要:

Many 3D IC applications such as MEMS and RF systems require Through-Silicon Via(TSV) with operations for high-speed vertical communication.In this paper,we introduce a novel air-gap coaxial TSV that is suiTab.for such RF applications.Firstly,the detailed fabrication process is described to explain how to acquire such a structure.Then,an Resistor Inductance Conductance Capacitance(RLGC) model is developed to profile the transverse electromagnetic field effect of the proposed air-gap TSV.The model is further verified by a 3D field solver program through the S-parameter comparison.With reference to the numerically simulated results,this analytical model delivers a maximum deviation of less than 6‰,on the conditions of varying diameters,outer to inner radius ratios,and SU-8 central angles,etc.Taking advantages of scalability of the model,a number of air-gap-based TSV designs are simulated,providing 1.6~4.0 times higher bandwidth than the conventional coaxial TSVs and leading to an efficient high frequency vertical RF interconnection solution for 3D ICs.

英文摘要:

Many 3D IC applications such as MEMS and RF systems require Through-Silicon Via (TSV) with operations for high-speed vertical communication. In this paper, we introduce a novel air-gap coaxial TSV that is suiTab, for such RF applications. Firstly, the detailed fabrication process is described to explain how to acquire such a structure. Then, an Resistor Inductance Conductance Capacitance (RLGC) model is developed to profile the transverse electromagnetic field effect of the proposed air-gap TSV. The model is further verified by a 3D field solver program through the S-parameter comparison. With reference to the numerically simulated results, this analytical model delivers a maximum deviation of less than 6%0, on the conditions of varying diameters, outer to inner radius ratios, and SU-8 central angles, etc. Taking advantages of scalability of the model, a number of air-gap-based TSV designs are simulated, providing 1.6-4.0 times higher bandwidth than the con- ventional coaxial TSVs and leading to an efficient high frequency vertical RF interconnection solution for 3D ICs.

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期刊信息
  • 《微电子学与计算机》
  • 中国科技核心期刊
  • 主管单位:中国航天科技集团公司
  • 主办单位:中国航天科技集团公司第九研究院第七七一研究所
  • 主编:李新龙
  • 地址:西安市雁塔区太白南路198号
  • 邮编:710065
  • 邮箱:mc771@163.com
  • 电话:029-82262687
  • 国际标准刊号:ISSN:1000-7180
  • 国内统一刊号:ISSN:61-1123/TN
  • 邮发代号:52-16
  • 获奖情况:
  • 航天优秀期刊,陕西省优秀期刊一等奖
  • 国内外数据库收录:
  • 荷兰文摘与引文数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊(2004版),中国北大核心期刊(2008版),中国北大核心期刊(2011版),中国北大核心期刊(2014版),中国北大核心期刊(2000版)
  • 被引量:17909