中文摘要：

本文采用化学气相输运（CVT）法,由Zn（5N）和Se（5N）一步直接生长了片状ZnSe单晶,并对其结构特性和光电性能进行分析。研究表明,生长出的ZnSe单晶仅显露（111）面,红外透过率约为40%～42%,具有较高的结晶质量。该ZnSe单晶可与In电极形成良好的欧姆接触,其体电阻率约为7.3×109Ω.cm。

英文摘要：

ZnSe single crystal silice was directly grown from elemental Zn（5N） and Se（5N） sources by chemical vapor transport（CVT） method.The structure and photoelectric properties of the as-grown ZnSe slice were studied.The as-grown ZnSe slice is single crystalline oriented along（111） direction,has the infrared transmittance in the range of 40%-42%,and of high crystalline quality.The ZnSe slice could form a stable ohmic contact with In electrode and the I-V measurement shows that the resistivity of the ZnSe slice is 7.3×109 Ω·cm.