位置：成果数据库 > 期刊 > 期刊详情页
Mechanism of nonvolatile resistive switching in graphene oxide thin films
  • ISSN号：0008-6223
  • 期刊名称：Carbon
  • 时间：0
  • 页码：3796-3802
  • 语言：英文
  • 相关项目：钙钛矿型锰氧化物中的异常各向异性磁电阻效应研究
作者： Fei Zhuge, Benlin Hu, et al|Run-Wei Li|
同期刊论文项目
钙钛矿型锰氧化物中的异常各向异性磁电阻效应研究
期刊论文 14
同项目期刊论文
Nonvolatile resistive switching in graphene oxide thin films
Nonvolatile resistive switching memory based on amorphous carbon
Relationship between magnetic domain configuration and crystallographic orientation in a colossal ma
Nonvolatile resistive switching in metal/La-doped BiFeO(3)/Pt sandwiches
Resistance switching in polycrystalline BiFeO3 thin films
Microstructure dependence of leakage and resistive switching behaviours in Ce-doped BiFeO3 thin film
Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capaci
Local leakage current behaviours of BiFeO3 films
Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the forma
Research Progress on Colossal Anisotropic Magnetoresistive Effect