中文摘要：

高温、强振、强腐蚀、高湿等恶劣环境中的监测和控制系统对MEMS（Microelectromechanicalsystems）提出了新的挑战。SiC具有化学惰性，高热导率及优良的力学、电学、高温性能，在MEMS技术中备受青睐，成为s卜MEMS体系极具竞争力的替代材料。综述了关于立方相碳化硅（3DsiC）薄膜的化学气相沉积（cVD）制备方法，介绍了其力学、电学性能的最新研究进展，最后举例说明了3CSiC薄膜在MEMS器件中应用的研究现状。

英文摘要：

The monitoring and control systems applied in severe environments, e.g. high temperature, intense shock/vibration, erosive flow, corrosive media, and high moisture, have put forward many challenges for MEMS technology. Silicon carbide （SIC） is a material with very attractive properties for MEMS used in hash environments. Its exceptional properties such as chemical inertness, high thermal conductivity, favorable electrical properties, me- chanical strength, and ability to operate at high temperature make it a competitive alternative to S~based MEMS. A review on the progress of 3C-SiC film involving CVD preparation method, investigations of mechanical and electrical properties is presented. Finally, current status of research on 3C-SiC MEMS devices is introduced and a few examples are given.