中文摘要：

利用半导体材料波长易调节的特点，设计了AlGaInAs／GaAs／AlGaAs压应变量子阱结构，得到760、800、860、930和976nm5个波长激射的半导体列阵激光器，同时设计了4个短波通滤波片参数，开展了半导体列阵激光器的多波长光束复合技术的实验研究，最终实现了5个波长的半导体列阵激光器的光束复合，得到112W的激光功率输出，总体效率为88．5％，其中波长复合效率达92．4％，输出聚焦光斑尺寸为136μm×1330μm，聚焦光功率密度达6．43×104W／cm2。

英文摘要：

Making use of the characteristic of adjustable wavelength of semiconductor materials, A1GaInAs / GaAs / A1GaAs compressive strain quantum well structure was designed and the diode arrays with different wavelength of 760, 800, 860, 930 and 976 nm were fabricated. And also four kinds of edge-band filters and one set of collimating system were designed. Then the five different beams were multiplexed and the laser power of 112 W with the total efficiency of 88.54% is obtained. And the focused spot and the foc~as optical power density are measured to be 136 μm× 1 330 μm and 6.43× 104 W/cm2, respectively.