中文摘要：

采用热丝化学气相沉积法在n型直拉单晶硅圆片表面双面沉积厚度为10nm的本征非晶硅（α—Si：H）薄膜。利用光谱型椭偏测试仪和准稳态光电导法研究热丝电流、H2体积流量和热丝与衬底之间的距离对α-Si：H薄膜结构和钝化效果的影响。结果表明，热丝电流为21．5～23．5A时，钝化后硅片的少子寿命随着热丝电流的增加呈现先增加后降低的趋势，热丝电流为23．0A时，钝化效果最好；H2体积流量为5～20cm3／min时，少子寿命随着H2体积流量的增加呈现先增加后降低的规律，体积流量为15cm3／min时，钝化效果最好；热丝与衬底间距为4～5cm时，随着间距的增加，薄膜的结构由晶化向非晶化转变，在间距为4．5cm时硅片的钝化效果达到最优。

英文摘要：

Intrinsic amorphous silicon （α-Si ： H） films with the thickness of 10 nm were bifacialdeposited on the n-type czochralski silicon wafer surface by using the hot-wire chemical vapor deposition （HWCVD） method. The influences of the filament current, the H2 volume flow rate and the filament-tosubstrate distance on the α-Si ： H passivation film structure and passivation effect were studied by spec- troscopic ellipsometry and quasi-steady-state photoconductance method. The results show that after the passivation the minority carrier life time of the silicon wafer passivated with α-Si ： H films increases firstly and then decreases with the filament current increasing from 21.5 A to 23.5 A. And the passivation effect reaches the optimum state when the filament current is 23.0 A. The minority carrier life time increases firstly and then decreases with the volume flow rate of H2 increasing from 5 cm3 · min-1 to 20 cm3 · min-1 And the passivation effect reaches the optimum value when the volume flow rate of H2 is 15 cm3 · min-1 The main structure of the films transforms from crystalline state to amorphous state with the increase of the distance between the filaments and substrate from 4.0 cm to 5.0 cm. The passivation effect of the silicon wafer reaches the optimum state with a distance of 4.5 cm.