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In situ nitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor de
  • ISSN号：2040-3364
  • 期刊名称：Nanoscale
  • 时间：2013
  • 页码：600-605
  • 相关项目：外延立方氮化硼薄膜的掺杂及高温半导体特性研究
作者： Wu, Qihui|Gao, Fei|Lee, Chun-Sing|Zhang, Wenjun|
同期刊论文项目
外延立方氮化硼薄膜的掺杂及高温半导体特性研究
期刊论文 27 会议论文 7
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