中文摘要：

采用溶胶-凝胶方法制备Pb（Zr0.52Ti0.48）O3（PZT）纳米粉末,将此粉末按一定比例加入到同成分PZT溶胶中,采用溶胶-电泳沉积技术在ITO玻璃衬底上制备PZT厚膜。采用X射线衍射分析、SEM及HP4294A阻抗分析仪等对PZT膜进行了微观结构和介电性能测试,研究了电泳电压、热处理温度及电泳时间对PZT膜结构及膜厚的影响,结果表明,在1V电压下进行电泳,600℃热处理20min,可以得到表面均匀平整的纯钙钛矿结构PZT膜,以（110）择优取向,通过控制电泳时间可有效控制膜的厚度。获得了膜厚为30μm、介电常数达到ε33^T/ε0=781、介电损耗为tanδ=0.0083、剩余极化与矫顽电场强度分别为24.6μC/cm^2与61.9kV/cm铁电性能较好的PZT膜材料。

英文摘要：

The Pb （Zr0.52T0.48）O3 （PZT） nanopowder was made by the sol-gel method. Adding the nanopowder with certain ratio to the homo-compositive PZT sol, the PZT film was successfully deposited on ITO glass. XRD, SEM and HP4294A precision impedance analyzer were used to investigate the microstructure and the dielectric properties of the films. Factors effecting on the structure of the films were also discussed, which includes electrophoretic voltage, thickness of PZT films and thermal treatment temperature. The results show that pure perovskite structural PZT films which had prefered orientation of （110） plane can be made by electrophoretic deposition with 1V voltage and sintered at 600℃ for 20 min. The thickness of the films could be effectively controlled by changing the electrophoretic time. When the thickness of the films reaches 30μm, the best general performance have been got： dielectric constant ε33^T/ε0 =781, dielectric loss tanδ =0.0083, remnant polarization Pr = 24.6μC/cm^2 and coercive field EС= 61.9kV/cm.