中文摘要：

为了计算微波器件的微放电阈值，提出了一种快速单粒子蒙特卡罗方法．该方法对二次电子出射能量、出射角度和相位等参数进行随机处理，结合四阶龙格库塔法和Furman模型模拟了电子运动和二次电子发射系数，并以多次连续碰撞的二次电子发射系数的算数平均值作为微放电效应发生的判据．以平板传输线横电磁模式为研究对象，分别采用快速单粒子蒙特卡罗方法、统计模型、传统蒙特卡罗方法以及粒子模拟方法计算其微放电阈值和敏感区域．计算结果表明，该方法不仅具有与统计模型和粒子模拟方法相当的计算精度，而且比统计模型方法的适应性更强，比传统蒙特卡罗方法的稳定性更好，比粒子模拟方法的计算效率高几十倍以上。

英文摘要：

To compute the breakdown thresholds of multipactor in microwave devices, a fast single particle Monte-Carlo （SP- MC） method is presented, which considers the random nature of secondary electrons and their initial energies, phases and angles. With Runge-Kutta method and Furman model, the motion of the electron and the secondary electron yield （SEY） of the wall of the device are computed. An effective SEY is regarded as a criterion to estimate whether multipactor occurs, which is computed by averaging the SEYs for all impacts. As an example, the multipactor in a transmission line composed of parallel plates is investigated with the presented SP-MC method, traditional Monte-Carlo method, statistical theory method and particle-in-cell method separately. The results obtained from the SP-MC method accord well with those from the statistical theory method and particle-in-cell method, including the results of the susceptibility zones, break thresholds on specific products of frequency and gap space. Moreover, the SP-MC method is more adaptive than the statistical theory method, more stable than the traditional Monte-Carlo method and much more efficient than the particle-in-cell method.