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中文摘要：
传统的基于半导体放大器的全光异或逻辑门，由于受SOA中长载流子寿命引起码型效应的影响，其工作速率的提升受到了限制。提出了一种基于MZI和体材料SOA中交叉增益调制的全光逻辑异或门的工作速率提升的实现方案。通过增加MZI两臂上SOA的长度和提高入射直流探测光功率，增强了直流探测光和数据光在较长的SOA中的相互作用，以减小超高速工作状态下SOA中的栽流子寿命，提升体材料SOA的工作速率，实现超高速XOR逻辑功能。研究表明，入射直流探测光功率的提升、SOA长度的增加、数据光峰值功率的提高及数据光脉宽的减少，可使XOR逻辑门的输出信号质量得到明显的提升，使全光异或逻辑门的工作速率可望达到1Tb／s。
英文摘要：
The bit rate of the traditional all-optical logic gates based on semiconductor optical amplifier （SOA） and Mach-Zehnder Interferometer （MZI） is limited by the long carrier lifetime in SOA. In this paper, an implement scheme of improving the bit rate of all-optical XOR logic gate based on a MZI and cross-gain modulation （XGM） in bulk SOAs is proposed. Through increasing the length of SOA in the two arms of MZI and injecting high power of CW probe light, high bit rate of all-optical XOR logic gate can be realized due to a decrease in the carrier lifetime of SOA by enhancing the interaction of CW probe light and date signal in long SOAs. Numerical results demonstrate that the quality of output signal in all-optical XOR gate can be obviously improved by using CW probe light with high power, long SOAs, high peak power and narrow pulse width of data signal. This scheme offers the possibility of implementing all-optical XOR functionality with high performance even at an ultrahigh bit rate, i.e. Tb/s.
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