位置：成果数据库 > 期刊 > 期刊详情页
Defect-enhanced coupling between graphene and SiO2 substrate
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2014.8.11
  • 页码：-
  • 相关项目：石墨烯的结构缺陷识别与检测
作者： Xie, Guibai|Chen, Peng|Shi, Dongxia|Zhang, Guangyu|
同期刊论文项目
石墨烯的结构缺陷识别与检测
期刊论文 11
同项目期刊论文
Tunable Electroluminescence in Planar Graphene/SiO2 Memristors
Scalable Growth of High-Quality Polycrystalline MoS2 Monolayers on SiO2 with Tunable Grain Sizes
The correlation of epitaxial graphene properties and morphology of SiC (0001)
Identification of dominant scattering mechanism in epitaxial graphene on SiC
A General Route Towards Defect and Pore Engineering in Graphene
Fabrication of high-quality all-graphene devices with low contact resistances
Gate tunable MoS2–black phosphorus heterojunction devices