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中文摘要：
首先介绍了共振隧穿理论和一种新效应——介观压阻效应,对AlxGa1-xAs/GaAl/AlxGa1-xAs共振隧穿双势垒结构的轴向施加压应变作了分析,然后计算了轴向应变对垒宽和垒高的影响,对透射系数和隧穿电流用Matlab作了仿真.发现压应变可以使隧穿电流线性增加,偏压不同电流增加的速率也不同,为设计共振隧穿器件提供了理论依据.
英文摘要：
This paper firstly introduced a new effect,meso-piezoresistive effect,analysed the strain on AlxGa1-xAs/GaAl/AlxGa1-xAs double-barrier resonant tunneling structure along the axis director; then computed the influence of the barrier width and height from the axial strain,used Matlab as tool simulate the transmission coefficient and tunneling electric current. Finally we find the strain can make the electric current increase linearly,the velocity of increase differ with different voltage. It offers a theory basis for devising resonant tunneling devices.
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Pressure and temperature tuning of the valence band offset in cubic superlattices：The effects of pie
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