掺杂能够实现传统宽带隙半导体光催化材料的可见光响应,但引入的局域杂质能级易成为载流子的复合中心,降低材料的光催化活性。固溶体方法可以实现带隙和带边位置的精确调控,使材料的光吸收和氧化还原电位达到最佳平衡,是改善其光催化性能的有效方法。本文结合我们课题组近些年来的研究,从固溶体方法对半导体光催化材料带隙和带边位置的调控以及对载流子分离和迁移等性质的影响出发,概述了近年来该领域的最新研究进展,总结了固溶体方法在发展中所面临的主要问题,并对其发展趋势进行展望。
Traditional semiconductor photocatalysts with a wide band gap can achieve visible light responses through element doping. However, the localized levels introduced by impurities may act as recombination centers of charge carriers, which may lower the photocatalytic activity of the doped materials. The solid solution method can realize precise regulation of the band gap and band edge positions of materials to obtain an optimal balance between their optical absorption and redox potentials. The solid solution method is therefore an effective approach to improve the photocatalytic performance of semiconductor materials. In the present review, considering our recent research, we briefly discuss the latest progress of the solid solution method to tune the band gap and band edge positions of photocatalytic materials as well as examining its influence on carrier separation and migration properties. Finally, challenges and prospects for further development of this method are presented.