中文摘要：

量旋转霍尔(QSH ) 绝缘体是快速在压缩事的物理正在变得主流的材料的一个新班。为 QSH 绝缘体的发展的主要障碍是他们和底层的强壮的相互作用使他们困难试验性地学习。在这研究，使用密度功能的理论，我们发现尘埃 ₂ 是为 GeI 单层的一根好火柴。货车 der Waals GeI/MoTe ₂ heterosheet 的热稳定性经由分子动力学的模拟被检验。扫描通道显微镜学模仿表明 GeI 单层完美地保存尘埃 ₂ 的 bulked 蜂房结构。尘埃 ₂ 上的 GeI 被证实由直接计算旋转 Chern 数字是 1 与 0.24 eV 的相当大的间接体积 bandgap 维持它的拓扑的乐队结构。是期望， GeI 的电子活动性被尘埃 ₂ 提高底层限制。根据有有效团的近似的变丑潜力理论， GeI/MoTe ₂ 的电子活动性作为 372.7 厘米 ²  被估计吗？？

英文摘要：

Quantum spin Hall （QSH） insulator is a new class of materials that is quickly becoming mainstream in condensed-matter physics. The main obstacle for the development of QSH insulators is that their strong interactions with substrates make them difficult to study experimentally. In this study, using density functional theory, we discovered that MoTe2 is a good match for a GeI monolayer. The thermal stability of a van der Waals GeI/MoTe2 heterosheet was examined via molecular-dynamics simulations. Simulated scanning tunneling microscopy revealed that the GeI monolayer perfectly preserves the bulked honeycomb structure of MoTe2. The GeI on MoTe2 was confirmed to maintain its topological band structure with a sizable indirect bulk bandgap of 0.24 eV by directly calculating the spin Chern number to be -1. As expected, the electron mobility of the GeI is enhanced by MoTe2 substrate restriction. According to deformation- potential theory with the effective-mass approximation, the electron mobility of GeI/MoTe2 was estimated as 372.7 cm^2·s^-1·V^-1 at 300 K, which is 20 times higher than that of freestanding GeI. Our research shows that traditional substrates always destroy the topological states and hinder the electron transport in QSH insulators, and pave way for the further realization and utilization of QSH insulators at room temperature.