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基于半导体光放大器的干涉型器件中不协调性的分析
  • 期刊名称：半导体学报,2006年10期27卷pp:1851-1856
  • 时间：0
  • 分类：TN36[电子电信—物理电子学]
  • 作者机构：[1]北京交通大学理学院光信息科学与技术研究所,北京100044
  • 相关基金：国家自然科学基金资助项目（批准号：60577020）
  • 相关项目：并行数字式级联结构全光缓存器的研究
关键词： 半导体光放大器, 干涉仪, 交差相位调制, 交叉增益调制, 线宽增强因子, 不协调性, semiconductor optical amplifier, interferometer, cross-phase modulation, cross-gain modulation, linewidth enhancement factor, unbalanced state
中文摘要：

分析了SOA线宽增强因子α及交叉增益调制对干涉仪输出功率的影响，指出在SOA中由于交叉增益调制和交叉相位调制并存，干涉仪的两臂输出不能同时达到极大和极小值，存在一定的不协调性；干涉仪最佳工作点不是唯一的，而是存在一个和α一一对应的工作区间．文中对干涉仪的不协调程度、工作区间及消光比进行了详细分析，发现随着α的增加，干涉仪的不协调程度降低、工作区间范围缩小且干涉消光比提高；在和α对应的同一工作区间内，消光比随工作点的后移呈增加趋势．实验结果进一步证明TN论分析的正确性．

英文摘要：

The influence of the linewidth enhancement factor and cross-gain modulation on the output power of an interferometer based on a semiconductor optical amplifier （SOA） is analyzed. It is found that two output ports of the interferometer do not reach the minimum and maximum simultaneously due to cross-gain modulation. The interferometer has a working range instead of one working point, and this range has a relation with a. The unbalanced state,working range and extinction ratio are discussed. With the increase of a, the degree of unbalanced and work range decrease, while the extinction ratio increases. Experimental results prove the correctness of theoretical analysis.

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并行数字式级联结构全光缓存器的研究
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