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Effect of annealing temperature of Bi1.5Zn1.0Nb1.5O7 gate insulator on performance of ZnO based thin film transistors
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TN321.5[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]
  • 作者机构:[1]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China, [2]State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • 相关基金:Proj ect supported by the National Natural Science Foundation of China (Nos. 51332003, 51202184), the International Science & Technology Cooperation Program of China (Nos. 2010DFB 13640, 2011DFA51880), and the "111 Project" of China (No. B 14040).
中文摘要:

The bottom-gate structure ZnO based thin film transistors(ZnO-TFTs) using Bi1.5Zn1.0Nb1.5O7(BZN)thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering.We investigated the effect of annealing temperature at 300,400,and 500 ℃ on the performance of BZN thin films and ZnO-TFTs.XRD measurement confirmed that BZN thin films were amorphous in nature.BZN thin films annealed at 400 ℃ obtain the high capacitance density of 249 nF/cm2,high dielectric constant of 71,and low leakage current density of 10-7 A/cm2 on/off current ratio and field effect mobility of ZnO-TFTs annealed at 400 ℃are approximately one order of magnitude and two times,respectively higher than that of ZnO-TFTs annealed at300 ℃.When the annealing temperature is 400 ℃,the electrical performance of ZnO-TFTs is enhanced remarkably.Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21 × 1012cm-2.

英文摘要:

The bottom-gate structure ZnO based thin film transistors (ZnO-TFTs) using Bi1.5Zn1.0Nb1.507 (BZN) thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500℃ on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400℃ obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10^-7 A/cm2 ordoff current ratio and field effect mobility of ZnO-TFTs annealed at 400℃ are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300℃. When the annealing temperature is 400℃, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21×10^12cm^-2.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754