中文摘要：

为了解决低功耗、深亚微米工艺条件下基准源的精度问题,本文通过引入工作在亚阈值区MOS管和数字微调技术,提出一种带POR的可校正超低功耗电压基准源,并采用TSMC 90nm COMS工艺对其进行仿真验证。仿真结果表明：该基准源总电流仅为0.876μA,温度系数为24.4 10-6/℃,微调电压步进为25mV。本文提出的基准源与传统基准源比,具有低温漂、可校正、低功耗等优点,适用于便携式低功耗电子产品。

英文摘要：

In order to solve the problem of accuracy problem of voltage reference in low power and deep sub-micron process,a correctable ultra low power voltage reference with power on reset（POR）is proposed,by introducing the MOS tube working in the sub-threshold region and digital trimming technology.The voltage reference is simulated by Spectre in TSMC90 nm COMS technology.Simulation results show that,the designen reference achieve total current of only 0.876μA,temperature drift coefficient of 24.4 10-6/℃ and tunable voltage with 25 mV steps.Compared with traditional voltage reference,the proposed voltage reference has the advantages of low temperature drift coefficient,easy correction and low power consumption,and can be applied to low-power and portable electronic devices.