Pr部分替代Ca可以在Bi-2223的超导层中引起局域缺陷(简称Pr离子缺陷),本文分析了不同含Pr量的Bi-2223/Ag带材在垂直于带面的外场下电阻转变特性,研究了其磁通钉扎势垒的变化规律.结果表明:Pr离子缺陷显著提高了Bi-2223带材的磁通钉扎势垒(U).不同含Pr量样品的磁通钉扎势垒(U)均满足U/(1-Tirr/Tco)(1/H^α的规律.其不同α值反映了样品中不同的磁通蠕动方式.在不含Pr离子缺陷的样品中.磁通主要以双弯结的方式进行蠕动,含Pr离子缺陷的样品中磁通蠕动主要以直接剪切的方式进行.
The resistive transitions of (Bi, Pb)2 Sr2Ca2-xPrxCu3Oy silver sheathed tapes with x= 0.0, 0. 001, 0. 002 have been measured under applied magnetic fields oriented perpendicular to tape plane (H//c) from 0 to 7T. The transitions can be well agreed with the thermally activated flux creep model by Anderson: R(T,H) = R0 exp[- U(H)/kBT] in the low resistance range. The calculated activation energies U (H) of flux motion mcreased drastically in the samples with proper amount of Pr-ion defects. For our samples, U are all well fitted with the law of U/(1 - Tirr/Tco) ∝ 1/H^α) , and the markedly changed α indicated the flux creep according to varied manners in different samples. Most of the flux creep by double kinks in the tape without Pr-ion defects, while that through directly lattice shearing in the tapes with Pr-ion defects.