石墨烯具有优异的光学、电学、机械等特性,被视为新型材料的突破口;GaN基材料具有直接宽禁带、热稳定性强、高功率等性质,已经成为"继硅之后最重要的半导体材料"。将石墨烯与GaN基宽禁带半导体材料相结合,发挥两种材料体系的优势,将为光电子、微电子器件的发展带来新的契机。关于石墨烯与GaN基材料相结合的研究目前已经有所突破,本文简要概述了近年来石墨烯与GaN基材料接触机理方面和石墨烯应用于GaN基材料器件方面的进展状态。
Due to its special structure,graphene has very good optical,electrical,mechanical and other properties,and it is regarded as a breakthrough of the new materials. Thanks to the wide band gap,thermal stability,high working power and other properties,GaN based materials have become"the most important,after the silicon semiconductor material. "It will bring great benefits for the photoelectric and microelectric devices if the graphene can be successfully combined with GaN based materials. There have already been some breakthroughs in the research of combination of graphene and GaN based materials. This paper briefly summarized recent findings of physical mechanisms of the contact between graphene and GaN-based materials and the researches of the applications of graphene to the GaN-based materials.