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中文摘要：
为了探究磷元素对初生硅生长的影响和磷元素的变质机理,通过电磁悬浮熔炼设备对加入磷元素的Al-70%Si合金进行了深过冷处理,使用高速摄影仪记录了Al-70%Si合金熔体凝固过程中的动态画面,采用扫面电镜分析了凝固后的试样表面形貌.实验结果表明：加入磷元素后,初生硅依然具有三种生长方式：小平面生长、中间方式生长和非小平面生长;磷元素可以明显地改变三种生长方式之间转变的临界过冷度;当磷的加入量为0.5%时,初生硅由小平面生长过渡到中间方式生长的临界过冷度ΔT1为92K,由中间方式生长过渡到非小平面生长的临界过冷度ΔT2为206K;当磷的加入量为1.0%时,相应的临界过冷度ΔT1和ΔT2分别为56K和179K.
英文摘要：
In order to explore the effect of phosphorus element on the primary silicon,and understand the modification mechanism of phosphorus element,Al-70%Si alloys of different amount of phosphorus element were undercooled by an electromagnetic levitator（EML）.Spherical samples with different undercooling were obtained.Their morphologies during and after solidification were observed by a highspeed camera（HSC）and a scanning electron microscope（SEM）.The result shows：The primary silicon also has three growth mode-faceted,intermediate and non-faceted mode after adding phosphorus element.Phosphorus element obviously changes the critical undercooling of transition among three growth mode.When adding 0.5% phosphorus element,the critical undercooling for primary silicon to grow from faceted mode to intermediate modeΔT1and from intermediate mode to non-faceted modeΔT2are 92 K and 206 K,respectively.When the addition amount is 1.0%,the corresponding critical undercooling is 56 Kand 179K.
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