中文摘要：

随着各种新纳米CMOS器件技术的出现,在等比例缩小原则的限制下,硅膜厚度逐渐减薄,这对通过电容-电压法进行物理参数提取带来了挑战。本文借助半导体二维仿真器件——MEDICI,研究了不同硅膜厚度下金属-绝缘层-半导体结构的低频和高频电容-电压特性,通过研究不同偏置下的能带结构探讨了其内在物理机理,并分析了考虑金属与半导体功函数差、绝缘层固定电荷等因素的影响时该结构的电容-电压特性,为通过电容-电压特性法对薄硅膜MIS结构进行参数提取与表征进行了有益探索。

英文摘要：

With the emergence of various new nano CMOS device technologies,the thickness of silicon film is gradually thinning under the restriction of the principle of scaling down,it is a challenge to extract physical parameters by capacitance-voltage method. By using the two-dimensional simulator MEDICI,low-frequency and high-frequency capacitance-voltage characteristics of the metal-insulator-semiconductor structure under different silicon film thickness were investigated in this paper. The inherent physical mechanism was researched by band structures under different bias,in addition,by considering the influence of the work function difference between the metal and semiconductor,fixed insulator charges and so on,the capacitance-voltage characteristics of this structure were analyzed.This work contributes to the parameter extraction and characterization of MIS transistor with thin silicon film.