采用改进的Hummers方法制备了多层氧化石墨烯(Few-layered Graphene Oxide,FGO),并使用X-射线衍射(XRD)和原子力显微镜(AFM)对其结构进行了表征,提出了FGO的分子结构模型,通过AFM可知FGO主要由2~6层的单层氧化石墨烯组成.将FGO的水相悬浮液与含有油溶性还原剂的氯仿溶液进行混合反应,得到了部分还原的FGO(R-FGO),AFM结果表明R-FGO由平整的类氧化石墨烯(GO)层和卷曲的类石墨烯(G)层构成,其可在水中分散,且具有一定的导电性.
In this paper,we prepared few-layered graphene oxide(FGO) using a modified Hummers method.X-ray diffraction(XRD) and atomic force microscope(AFM) were used to characterize the structure and morphology of FGO.We proposed a structure model of FGO based on the results of XRD and AFM,which showed that FGO was mainly composed of 2-6 monolayer graphene oxides.Partially reduced FGO(RFGO) was obtained by mixing water suspension of FGO and chloroform solution of hydrophobic reducing agent.AFM showed that the structure of R-FGO was consisted of flat quasi-GO layers and crimped quasi-graphene layers.The R-FGO can be well dispersed in water and presents electric conductivity.