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Influence of GaCl carrier gas flow rate on properties of GaN films grown by hydride vapor-phase epit
  • ISSN号：0925-8388
  • 期刊名称：Journal of Alloys and Compounds
  • 时间：0
  • 页码：6212-6216
  • 相关项目：GaN体单晶生长基础研究
作者： Shao, Yongliang|Zhang, Lei|Hao, Xiaopeng|Wu, Yongzhong|Chen, Xiufang|Qu, Shuang|Xu, Xiangang|Jiang, Minhua|
同期刊论文项目
GaN体单晶生长基础研究
期刊论文 29
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