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Comparison of the strain of GaN films grown on MOCVD-GaN/Al(2)O(3) and MOCVD-GaN/SiC samples by HVPE
  • ISSN号：0022-0248
  • 期刊名称：Journal of Crystal Growth
  • 时间：0
  • 页码：62-66
  • 相关项目：GaN体单晶生长基础研究
作者： Zhang, Lei|Shao, Yongliang|Hao, Xiaopeng|Wu, Yongzhong|Qu, Shuang|Chen, Xiufang|Xu, Xiangang|
同期刊论文项目
GaN体单晶生长基础研究
期刊论文 29
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