中文摘要：

制备以TPB3TSi为发光材料的黄色发光器件。实验表明,当TPB3TSi薄膜厚度为20nm时,器件的发光谱峰位于580nm,其双层和3层器件的最大亮度分别达到7507.6和1385cd/m2（17V电压下）,但是器件的电流较大,造成了器件的发光效率偏低,其原因是TPB3TSi材料本身的电荷陷阱（所谓陷阱指的是拥有比母体更容易接受电子或者空穴的能级的位置）较多,荧光效率低,从而降低了器件的效率。

英文摘要：

Yellow light-emitting device with 2, 2, 4, 4-tetraphenyl-3,3-bisthienylsilole （TPB3 TSi） as an emitter was studied. It was found that light emissive spectrum was located at 580nm, and the maximum luminance of double and triple layer devices are 7507.6 and 1385 cd/m^2 （at a bias voltage of 17V）, respectively, when the thickness of TPB3TSi was 20nm. But the device current density is relatively high, leading to the reduced luminance efficiency. This is ascribed to the charge carrier traps of TPB3TSi （traps refer to the energy levels which have a higher ability of accepting electrons or holes） and low fluorescent efficiency.