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Nondoped-type White Organic Light-Emitting Diode Using Star-Shaped Hexafluorenylbenzene as an Energy Transfer Layer

ISSN号：1674-0068
期刊名称：《化学物理学报》
时间：0
分类：X703[环境科学与工程—环境工程] TN312.8[电子电信—物理电子学]
作者机构：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 510054, China, [2]Department of Polymer Science, School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, Shanghai 200240, China
相关基金：This work was supported by the National Natural Science Foundation of China （No.60425101 and No.20674049）, the Program for New Century Excellent Talents in University （No.NCET-06-0812）, and the Young Talent Project at University of Electronic Science and Technology of China （No.060206）.

作者： Jun-sheng Yu[1], Tao Ma[1], Shuang-ling Lou[1], Ya-dong Jiang[1], Qing Zhang[2]

关键词：有机物, 发光二极管, 能量转移, 化学分析, White organic light-emitting diode, diethyl-9H-fluoren-2-yl）benzene, Energy transfer, Star-shaped hexafluorenylbenzene, 1,2,3,4,5,6-hexakis（9,9- Ultrathin layer

中文摘要：

有 indium-tin-oxide ( ITO )的结构的白器官的轻射出的二极管( WOLED ) /N ，N'-bis-( 1-naphthyl ) -N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine ( NPB ) /1,2,3,4,5,6-hexakis ( 9,9-diethyl-9H-fluoren-2-yl )苯( HKEthFLYPh ) /5,6,11,12 -tetraphenylnaphtacene ( rubrene ) /tris ( 8-hydroxyquinoline )铝( Alq ₃)/Mg:Ag 被真空免职方法制作，在哪个新奇塑造星的 hexafluorenylbenzene HKEthFLYPh 被用作精力转移层，并且 rubrene 的极端薄层作为黄轻射出的层在 HKEthFLYPh 和 Alq ₃层之间被插入而不是使用一个费时间的做过程。有委员会共产国际歌 De L'Eclairage (CIE ) 的相当纯的 WOLED 协调(0.32， 0.33 ) 当 rubrene 的厚度是 0.3 nm，和光谱时，被获得对应用电压感觉迟钝。设备在 18 V 产出 4816 cd/m ² 的最大的发光性。

英文摘要：

White organic light-emitting diodes （WOLEDs） with a structure of indium-tin-oxide （ITO）/N,N＇-bis- （1-naphthyl）-N,N＇-diphenyl- （1, 1＇-biphenyl）-4,4＇-diamine （NPB）/1,2,3,4,5,6-hexakis（9,9-diethyl-9H-fluoren-2- yl）benzene （HKEthFLYPh）/5,6,11,12-tetraphenylnaphtacene （rubrene）/tris（8-hydroxyquinoline） aluminum （Alq3）/Mg：Ag were fabricated by vacuum deposition method, in which a novel star-shaped hexafluorenyl- benzene HKEthFLYPh was used as an energy transfer layer, and an ultrathin layer of rubrene was inserted between HKEthFLYPh and Alq3 layers as a yellow light-emitting layer instead of using a time-consuming doping process. A fairly pure WOLED with Commissions Internationale De L＇Eclairage （CIE） coordinates of （0.32, 0.33） was obtained when the thickness of rubrene was 0.3 nm, and the spectrum was insensitive to the applied voltage. The device yielded a maximum luminance of 4816 cd/m2 at 18 V.

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