中文摘要：

采用金属有机物气相外延（MOVPE）技术在c面蓝宝石衬底上，引入脉冲原子层外延技术，制备了一系列表面平整度较高的高Al组分AlGaN基异质结构外延片．并采用电子束金属蒸镀技术及优化热退火方法，获得了良好的欧姆接触电极，进一步将外延片制备成LED管芯．通过对量子结构有源层量子阱混晶组分的设计和调整，掌握并实现了主波长260-330nm紫外LED结构材料的制备．

英文摘要：

High Al content AlGaN-based ultraviolet light-emitting diode （LED） structures were grown on sapphire substrate by metal organic vapor-phase epitaxy （MOVPE）. The pulsed atomic layer epitaxy technology was adopted to improve the crystal quality. Ohmic contacts for the LED devices were obtained by optimizing the annealing conditions. The UV-LEDs with different wavelength（from 260 nm to 330 nm） were achieved by tuning the Al content.