中文摘要：

通过研究基片种类、加热温度、保温时间、冷却速度及是否加入催化剂等不同工艺参数对低维Ga2O3，纳米材料形貌的影响，确定出合成5种不同形貌β-Ga2O3纳米材料的工艺条件。场发射扫描电镜（FE-SEM）表明5种不同形貌α-Ga2O3纳米材料分别为纳米线、纳米棒、纳米带、纳米环及纳米片。X射线衍射（X-ray）分析结果表明不同形貌纳米材料均为晶格常数日=1．223nm，b=0．304nm，c=0．58nm，a=90°，β=103．7°，γ=90°的单斜晶系β-Ga2O3晶体。

英文摘要：

The influences of substrate categories, heating temperature, heat preservation time, cooling ratio and catalyst-assisted or catalyst-free were investigated on the morphologies of Ga2O3 nanomaterials, the process conditions for different morphologies fl-Ga2O3 nanomaterials were concluded. Field emission scanning electronic microscope （FE-SEM） indicated that the resulting materials were nanowires, nanorods, nanobelts, nanoring and nanoslice. X-ray diffraction（XRD） showed that all the received nanomaterials were monoclinic floGa2O3 crystalline with the lattice constant： a = 1.223 nm, b = 0.304 nm, c =0.58 nm, a=90°, fl=103.7°,γ=90°. The growth mechanism for the products was discussed in the end.