中文摘要：

采用直流磁控溅射技术在单晶硅衬底上沉积Ni-Mn-Ga铁磁性形状记忆薄膜。试验结果表明，Ar工作压强对Ni-Mn-Ga薄膜化学成分有显著影响。Ni含量随Ar工作压强的升高呈先增加后减少的趋势，Mn含量呈先减少后增加的趋势，Ga含量几乎呈线性减少的趋势。随Ar工作压强的升高，薄膜的e／a值逐渐增大，薄膜的相变温度逐渐升高，室温下可以获得具有四方结构马氏体相的Ni-Mn-Ga薄膜。

英文摘要：

In this study, Ni-Mn-Ga ferromagnetic shape memory thin films have been deposited on silicon substrates by means of D. C magnetron sputtering technique. The results show that the fully crystallized thin films are tetragonal structure martensitic phase at room temperature. The Ar working pressure has dramatically effect on the compositions of Ni-Mn-Ga thin films. The contents of Ni in the Ni-Mn-Ga thin films firstly increase and then decrease with the increase of Ar working pressure increasing, and the contents of Mn firstly decrease and then increase, whereas the contents of Ga decrease almost linearly with the working pressure increasing. The martensitic transformation temperature and e/a increase with the Ar working pressure increasing, the martensitic phase with tetragonal structure can be obtained at room temperature.