中文摘要：

利用金属有机物气相沉积技术（MOCVD）在（0001）蓝宝石衬底上生长了Ga N基垂直腔面发射激光器（VCSEL）的多量子阱腔层结构。X射线衍射测量显示该多量子阱具有良好周期结构和平整界面。运用键合及激光剥离技术将该外延片制作成VCSEL,顶部和底部反射镜为极高反射率的介质膜分布布拉格反射镜（DBR）。在室温、紫外脉冲激光的泵浦条件下,观察到了VCSEL明显的激射现象,峰值波长位于447.7 nm,半高宽为0.11 nm,自发辐射因子约为6.0×10^-2,阈值能量密度约为8.8 mJ/cm^2。在大幅度降低制作难度的情况下,得到目前国际最好结果同样数量级的激射阈值。降低器件制作难度有利于制备的重复性,有利于器件的产品化。

英文摘要：

Ga N-based multiple quantum wells（ MQWs） were epitaxially grown on（ 0001）-oriented sapphire substrate by metal organic chemical vapor deposition（ MOCVD） technique. X-ray diffraction measurements indicated that the MQWs had good periodic structure and smooth interface. By employing bonding and laser lift-off techniques,the MQW structure was sandwiched between two high reflectivity dielectric distributed Bragg reflectors（ DBRs）,forming a vertical-cavity surfaceemitting laser（ VCSEL）. Under optical pumping,the VCSEL achieved laser action at room temperature with a threshold pumping energy density of about 8. 8 mJ / cm^2. The laser emitted a blue light at 447. 7 nm with a narrow linewidth of 0. 11 nm,and had a high spontaneous emission factor of about 6. 0 × 10^- 2.