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First-principles study on the electronic, elastic and thermodynamic properties of three novel germanium nitrides
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:O623.11[理学—有机化学;理学—化学] TB33[一般工业技术—材料科学与工程]
  • 作者机构:[1]College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang 464000, China, [2]School of Architecture and Civil Engineering, Xinyang Vocational and Technical College, Xinyang 464000, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (Nos. 61475132, 11475143, 61501392, 11304141) and the National Training Programs of Innovation and Entrepreneurship for Undergraduates (No. 201510477001).
中文摘要:

The ultrasoft pseudo-potential plane wave method combined with the quasi-harmonic approach have been used to study the electronic,elastic and thermodynamic properties of the tetragonal,monoclinic and orthorhombic Ge3N4.The negative formation enthalpies,the satisfactory of Born’s criteria and the linear variations of elastic constants with pressure indicate that the three polymorphs can retain their stabilities in the pressure range of 0-25 GPa.The three Ge3N4 are brittle solids at 0 GPa,while they behave in ductile manners in the pressure range of 5-25 GPa.t- and o-Ge3N4 are hard materials but anisotropic.m-Ge3N4 has the largest ductility among the three phases.The results reveal that m-Ge3N4 belongs to an indirect band gap semiconductor,while t- and o-Ge3N4 have direct band gaps.For the thermal properties,several interesting features can be observed above 300 K.o-Ge3N4exhibits the largest heat capacity,while m-Ge3N4 shows the highest Debye temperature.The results predicted in this work can provide reference data for future experiments.

英文摘要:

The ultrasoft pseudo-potential plane wave method combined with the quasi-harmonic approach have been used to study the electronic, elastic and thermodynamic properties of the tetragonal, monoclinic and or- thorhombic Ge3N4. The negative formation enthalpies, the satisfactory of Born's criteria and the linear variations of elastic constants with pressure indicate that the three polymorphs can retain their stabilities in the pressure range of 0-25 GPa. The three GeaN4 are brittle solids at 0 GPa, while they behave in ductile manners in the pressure range of 5-25 GPa. t- and o-GeaN4 are hard materials but anisotropic, m-Ge3N4 has the largest ductility among the three phases. The results reveal that m-Ge3N4 belongs to an indirect band gap semiconductor, while t- and o-Ge3N4 have direct band gaps. For the thermal properties, several interesting features can be observed above 300 K. o-GeaN4 exhibits the largest heat capacity, while m-Ge3N4 shows the highest Debye temperature. The results predicted in this work can provide reference data for future experiments.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754