通过空间带电粒子辐照地面等效模拟实验得到1 Me V和1.8 Me V电子辐照下GaAs/Ge太阳电池电学性能退化规律。根据太阳电池电学参数退化模型,对太阳电池短路电流退化曲线进行非线性分析,建立空间GaAs/Ge太阳电池少数载流子扩散长度损伤系数随入射电子能量变化的基本规律。结果表明,少数载流子扩散长度损伤系数随入射电子能量的增高而增大,这与短路电流退化幅度随电子能量变化规律一致。
The basic rules of GaAs/Ge solar cells degraded electrical parameters under 1 MeV and 1.8 MeV electrons irradiation were obtained through the accelerating ground equivalent simulation test for space charged particles. Nonlinearity of short-circuit current degradation curves of the solar cells was analyzed by its mathematical model. The change laws of minority carriers' diffusion length damage coefficient of space solar cells with the incident electrons energy were established. The results show that the minority carders' diffusion length damage coefficient is one of the main reasons for short-circuit current degradation; short-circuit current degradation amplitude increases with the increase of the electron energy degradation.