研究了不同Mn掺杂含量的ZnO纳米线在室温条件下的拉曼散射和光致发光性能,发现Mn掺杂入ZnO后引入了部分应力,在其拉曼光谱中表现出拉曼峰的位置发生偏移,Mn的掺杂含量越高,峰偏移得越明显。Mn的掺杂对ZnO纳米线的发光性能也有影响,尽管掺杂后仍保持有较为明显的紫外发光峰,但是,随着Mn含量的增加,紫外发光峰的强度降低,并且半峰宽逐渐增大。此外,Mn的掺杂明显地改变了ZnO紫外发光峰的位置。
Raman and photoluminescence spectra of the Zn1xMnxO nanowires with different content of manganese were investigated.The E2(high) and A1(LO) mode in raman spectra shifts to lower frequency with the increase of manganese.The photoluminescence measurements show that the ultraviolet emission of ZnO still preserved after manganese doped,while the bandgap of ZnO shifts to lower wavelength and the full width at half maximum of the ultraviolet emission increases with manganese increasing.Both Raman and photoluminescence spectra demonstrate that more stress introduced with the content of manganese increase.