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Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs
ISSN号:1386-9477
期刊名称:Physica E: Low-Dimensional Systems and Nanostructu
时间:2014.2.28
页码:166-169
相关项目:电注入氮化物微型谐振腔的研究
作者:
L. Sun|G. E. Weng|M. M. Liang|L. Y. Ying|X. Q. Lv|J. Y. Zhang|B. P. Zhang|
同期刊论文项目
电注入氮化物微型谐振腔的研究
期刊论文 21
会议论文 2
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Effect of laserpulse width on the laser lift-off process of GaN films
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InGaN/GaN多量子阱太阳电池的研制及特性研究
激光剥离GaN表面的抛光技术
GaN基光栅外腔半导体激光器研究进展