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Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells
ISSN号:1931-7573
期刊名称:Nanoscale Research Letters
时间:2012.10.31
页码:-
相关项目:电注入氮化物微型谐振腔的研究
作者:
X. Q. Lv|J. Y. Zhang|L. Y. Ying|W. J. Liu |X. L. Hu|B. P. Zhang|Z. R. Qiu|S. Kuboya|K. Onabe|
同期刊论文项目
电注入氮化物微型谐振腔的研究
期刊论文 21
会议论文 2
同项目期刊论文
Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface e
Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantu
Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon subs
Optical properties and carrier dynamics in asymmetric coupled InGaN multiple quantum wells
Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs
Temperature dependence of emission properties of self-assembled InGaN quantum dots
<a class="Blue">Low threshold lasing of GaN-based VCSELs with sub-nanometer roughnes
Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spread
Effect of laserpulse width on the laser lift-off process of GaN films
p-GaN退火对InGaN量子阱光学性能的影响
InGaN/GaN多量子阱太阳电池的研制及特性研究
激光剥离GaN表面的抛光技术
GaN基光栅外腔半导体激光器研究进展