中文摘要：

以Cu为基体,利用KCl-NaCl-NaF-SiO2熔盐体系电沉积出的硅作为渗硅硅源,电沉积硅和在Cu基体上渗硅同时进行,制备了Cu/Si梯度层。本工作就制备工艺参数对梯度层断面显微组织的影响进行了研究,结果表明：Cu/Si的梯度层断面由不同显微组织的表面层、中间层和过渡层构成,表面层是等轴晶组织,中间层是柱状晶组织;梯度层厚度随电沉积渗硅温度的升高、电沉积时间的延长而增厚,并且表面层晶粒、中间层晶粒均得到细化;电沉积时间延长,表面层厚度逐渐增大,中间层厚度逐渐减小;梯度层中,表面层金相相组织由（Cu）相、К相、γ相、η相和ε相中的一相或两相构成;中间层完全是（Cu）相。

英文摘要：

Cu/Si gradient layer was made by ihrigizing, on basal body Cu, using the silicon electrode- posited in KC1-NaC1-NaF-SiO2 system as silicon source. The influence of preparation parameter on mi- crostructure of Cu/Si gradient layer section was investigated. The results showed that Cu/Si gradient layer is made of surface layer, intermediate layer and transitional layer with different microstructure, and the microstructure of surface layer and intermediate layer are respectively the equiaxed grain and the columnate crystals organization. The thickness of Cu/Si gradient layer increases with electrodipo- sition temperature or electrodeposition time, and at the same time,the crystal grain size in surface lay- ers and intermediate layer all decrease. When extending electrodiposition time, the thickness of sur- face layer gradually increases and the thickness of intermediate layer gradually decreases. In the Cu/Si gradient layer, the phase constitute of surface layer is made of one or two of （Cu）, К,γ , η/and ε, and the phase constitute of transitional layer is （Cu）.