中文摘要：

应用SILVACO仿真软件，对N、P区杂质浓度分别为1×10^16和1×10^17cm^-3的非晶硅薄膜太阳能电池进行了后退火工艺仿真研究．结果表明：非晶硅薄膜太阳能电池的光谱响应特性随着后退火温度的升高和退火时间的增加而提高．与未后退火电池相比，保持后退火时间1min，退火温度分别为900，950和1000oE时．电池的短路电流（Iac）增加约5．39％；保持后退火温度为950℃，退火时间从1min增加到5min，电池的短路电流（L）提高约6．37％．但是，电池的光谱响应特性的提高与后退火工艺参数不成正比关系．为了减小后退火对电池杂质再分布的影响，确定最佳后退火工艺参数为950℃和4min．研究表明在薄膜电池的生产中增加后退火工艺可以有效地提高薄膜太阳能电池的光谱响应性能．

英文摘要：

With the help of SILVACO, simulation of post growth annealing is probed on the non silicon thin film solar cell with the concentration of 1 × 10^16 cm^-3 N-type impurity and 1 × 10^17 cm^-3 P-type impurity. The results show that the post-growth annealing process can effectively improve the spectrum response property of the solar cell with the post-growth annealing temperature rising and the post-growth annealing time increasing. Compared with non- post-growth annealing solar cell, the battery I~ improves about 5.39% with the annealing temperature of 900 ℃, 950 ℃ and 1 000 ℃in 1 rain;the battery Iac increases about 6.37% with the annealing time increasing from 1 to 5 min and the annealing temperature keeping 950 ℃. However, the improvement of the solar cell spectrum property is not proportional to the post-growth annealing process parameters. To minimize the influence of impurity redistribution, the best post-growth annealing parameters are determinedconcluded as 950℃ and 4 min. It is confirmed that the integration of post-growth annealing in manufacuring thin film solar cell can improve the spectrum response property of it effectively.