运用固体经验电子理论,对Al—Mg—Si合金GP区(L10型)价电子结构进行了计算,结果表明:L10型GP区的最强键与次强键比基体最强键强很多,其主键络骨架对合金键络起到增强作用;而其相邻的(111)晶面上的共价键络较强,使得该面滑移时较基体更困难,从而起到提高合金硬度的作用。
The valence electron structures of GP zones with model L10 in A1-Mg-Si alloy were calculated according to the empirical electron theory(EET) in solid. The results show that the strongest and second strongest bonds of GP zones with model L10 are much stronger than that of A1 matrix, and its primary bond-net framework can strengthen the matrix. The stronger atomic bonding of the adjacent( 111 ) crystal face of GP zones cause more difficulty of its relative slippage, which results in higher hardness of alloy.