利用双放电腔微波ECR等离子体增强非平衡磁控溅射技术成功制备了切削刀具测温传感器的SiO2多层复合绝缘薄膜,研究了SiO2多层复合绝缘薄膜的制备工艺。通过扫描电镜、原子力显微镜、台阶仪和XPS对SiO2功能薄膜的表面形貌、膜厚及成分进行了观测,结果表明,制备的多层复合SiO2薄膜厚度小、绝缘性好,绝缘电阻达到9.5×10^12Ω。其与金属基体结合力可达16.7N,满足制作切削刀具测温传感器的要求。
SiO2 multilayer composite insulating film for cutting measurement temperature sensor was prepared by means of advanced twinned microwave ECR plasma source enhanced radio frequency (RF) reaction non-balance magnetron sputtering technique. Preparation technology for the SiO2 film was studied. Micro-morphology, depth and compositions of SiO2 film was investigated by SEM, AFM, step profiler and XPS. The results showed that SiO2 thin-film posess small depth and excellent insulating property (insulation resistance reached 9.5×10^12Ω). Binding force between the SiO2 thin-film and metal substrate was 15.8 and 16.7N. It may meet the demands of preparing the cutter measurement temperature sensor.