中文摘要：

窄禁带碲镉汞（HgCdTe）是电子和空穴混合导电的多载流子体系材料,特别是对于p材料,由于电子和空穴的迁移率相差大约两个数量级（b=μe/μh≈102）,更容易受到少数载流子电子的干扰,因此单一磁场的霍尔测试无法准确有效地给出p型材料的电学参数.通过变温变磁场的霍尔测试对p型HgCdTe材料的磁输运特性进行了测试,结合迁移率谱技术确定了材料中各种载流子的迁移率,并给出了它们对电导的相对贡献,以及自然氧化对样品中各种载流子的影响.

英文摘要：

Very-narrow-gap HgCdTe single crystals were multicarrier semiconductor material with multiple electron and hole species in the conduction band.Especially,for p-type HgCdTe single crystals,the evaluation based on conventional measurements at a single magnetic field could lead to erroneous conclusions because of the large ratio of the electron mobility to hole mobility（b=μe/μh≈102）.Variable-magnetic-field Hall measurements were performed on bulk-grown HgCdTe single crystals at various temperatures.The mobility spectrum analysis（MSA） technique were employed in this paper.An accurate determination of both the carriers type and the carriers mobility usually involves multicarrier characterization.At the same time,the effect of the autoxidation for the HgCdTe multicarrier system was investigated.