中文摘要：

通过传统光电导衰退法和微波反射光电导衰退法两种方法对长波、中波及短波碲镉汞材料进行了载流子寿命测试，并对结果进行了比较。通过对比发现这两种方法测得的中波和短波材料的结果相差不大。但是对于长波材料，载流子寿命测试结果相差比较大，主要是因为长波材料寿命比较小，在相同的光激发条件下和偏流下，光电导灵敏度小，从而导致测出的信号小，在拟合的过程中偏差较大，导致载流子寿命相差较大。另外，用两种方法在同一短波材料的不同区域进行测试。传统光电导衰退法在材料电极附近测试结果明显偏小，电极区载流子寿命不到其他部分的50％。说明传统光电导衰退法测试载流子寿命受电极的影响比较大。

英文摘要：

Minority carrier lifetime of different HgCdTe materials was measured by two different lifetime measurement methods-photoconductive decay method （PCD） and microwave reflection photoconductive decay （MRPCD）. The results suggest that minority cartier lifetimes obtained by two methods are very similar of short wavelength and medium wavelength HgCdTe. For long wavelength HgCdTe, the lifetime values measured by two methods have obvious variation. Under the same bias and excitation conditions, the carrier lifetime of long wavelength HgCdTe is relatively small causing the deviations exist in two measured results. The lifetime of electrode area measured by PCD method is smaller than lifetime of the other area. The result shows that the lifetime measured by PCD method is related to the electrode process. And the lifetime measured by MRPCD is not affected by the electrode orocess.