中文摘要：

高反射率的基于 Al 的 n 电极被用来提高光性质基于 InGaN 395 nm 扭动薄片在紫外附近(紫外) 轻射出的二极管。Al仅仅，金属层能在血浆上形成欧姆的接触借助于化学预告的处理的蚀刻的n轧，与 2.211 瀠潲数瑲敩?景愠?穡浩瑵慨汬?潰慬楲敺?慇獵楳湡戠慥?楷桴愠瀠楡?景瘠牯楴散?的最低特定的接触抵抗桴潲杵??楤汥'虪罐骅棤皯W散椠?桴潥敲楴慣汬?湩敶瑳杩瑡摥戠?敶瑣牯搠晩牦捡楴湯琠敨牯？

英文摘要：

High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395nm flip-chip near-ultraviolet （UV） light-emitting diodes. The Al-only metal layer could form the Ohmic contact on the plasma etched n-GaN by means of chemical pre-treatment, with the lowest specific contact resistance of 2.211 × 10^-5 Ω. cm2. The AI n-electrodes enhance light output power of the 395 nm flip-chip near-UV light-emitting diodes by more than 33% compared with the Ti/AI n-electrodes. Meanwhile, the electrical characteristics of these chips with two types of n-electrodes do not show any significant discrepancy. The near-field light distribution measurement of packaged chips confirms that the enhanced luminescence is ascribed to the high refleetivity of the Al electrodes in the UV region. After the accelerated aging test for over 1000 h, the luminous degradation of the packaged chips with Al n-electrodes is less than 3%, which proves the reliability of these chips with the Al-based electrodes. Our approach shows a simplified design and fabrication of high-refleetivity n-electrode for flip-chip near-UV light emitting diodes.