中文摘要：

利用磁控溅射法制备Substrate/Seed Ta（5nm）/Co75Fe25（5nm）/CapTa（8nm）铁磁膜,通过透射电镜（TEM）、选区电子衍射（SAED）和X射线衍射（XRD）等分析测试手段,研究Ga＋离子辐照对CoFe磁性薄膜的矫顽力及薄膜的组织、结构的影响,利用SRIM2003软件模拟分析离子辐照后Ga、Ta等元素在CoFe薄膜中的深度分布情况。研究结果表明：采用低剂量（〈1×1013ion·cm-2）的Ga＋离子辐照对薄膜的矫顽力和磁性薄膜的组织、结构影响不大 随着辐照剂量的逐渐增大,磁性薄膜的矫顽力减小,晶粒变大,〈111〉方向的织构明显减弱 当辐照剂量〉1×1015ion·cm-2时,注入到CoFe薄膜中的Ta、Ga原子及Ga＋离子在与原子碰撞过程中形成空位、间隙原子等多种晶体缺陷,促进晶体向非晶体的转变。

英文摘要：

The CoFe ferromagnetic film with substrate/seed Ta （5 nm）/Co75Fe25 （5 nm）/Cap Ta （8 nm） was prepared by using UHV magnetron sputtering. The Influence of Ga＋ irradiation on the microstructure and the magnetic properties of CoFe film were investigated by means of transmission electron microscope （TEM）, selected electronic diffraction （SAED） and X-ray diffraction （XRD）. The concentration profiles fcr Ga, Ta in the film after irradiation were also simulated by SRIM2003. The results show that the coercivity and microstructure of the film vary slightly after irradiation at low dose （less than 1× 10^13 ion.cm-2）. With increasing of Ga＋ ion dose, the eoercivity decreases, the grain grows and the degree of 〈111〉 texture weakens. At high dose with 1× 10^15 ion·cm2, noncrystalline appears in the CoFe film due to the presence of large atoms such as Ta and Ga and the existence of large amount of vacancies resulting in the film non-magnetizaton.