位置：成果数据库 > 期刊 > 期刊详情页
The feasibility of using an Al-alloy film as the source/drain electrode in a microcrystalline silico
  • ISSN号：0038-1098
  • 期刊名称：Solid State Communications
  • 时间：0
  • 页码：1560-1563
  • 语言：英文
  • 相关项目：透明氧化物半导体薄膜晶体管及其驱动的ＯＬＥＤ全透明显示器件的研究
作者： Zhang, Hao|Jiang, Xue-Yin|Li, Jun|Zhang, Zhi-Lin|Zhang, Xiao-Wen|Lin, Hua-Ping|Zhang, Liang|
同期刊论文项目
透明氧化物半导体薄膜晶体管及其驱动的ＯＬＥＤ全透明显示器件的研究
期刊论文 33
同项目期刊论文
Influence of p-doping hole transport layer on the performance of organic light-emitting devices
Red organic light-emitting diodes based on wide band gap emitting material as the host utilizing two
Enhanced hole injection and improved performance in organic light-emitting devices by utilizing a no
Blue organic light-emitting diodes with low driving voltage and enhanced power efficiency based on M
Improved performance of Si-based top-emitting organic light-emitting device using MoOx buffer layer
High-performance ZnO thin film transistors with sputtering SiO2/Ta2O5/SiO2 multilayer gate dielectri
Red top-emitting organic light-emitting device using 6, 13-di-(3, 5-diphenyl)phenylpentacene doped e
Low-voltage-drive and high output current ZnO thin-film transistors with sputtering SiO2 as gate ins
Effect of a SiNx insulator on device properties of pentacene-TFTs with a low-cost copper source/drai
Reduction of the contact resistance in copper phthalocyanine thin film transistor with UV/ozone trea
Top-emitting organic light-emitting device with high efficiency and low voltage using a silver-silve
Glass-substrate-based high-performance ZnO-TFT by using a Ta2O5 insulator modified by thin SiO2 film
MoOx interlayer to enhance performance of pentacene-TFTs with low-cost copper electrodes
Copper phthalocyanine thin-film field-effect transistor with SiO2/Ta2O5/SiO2 multilayer insulator
The influence of the SiO2 deposition condition on the ZnO thin-film transistor performance
Red organic light-emitting diodes with high efficiency, low driving voltage and saturated red color
多层白色有机发光器件的结构和性能优化
具有高效空穴注入的高电子传输层的白光电致发光器件
Estimation of electron mobility of n-doped 4, 7-diphenyl-1, 10-phenanthroline using space-charge-limited currents
用反应溅射法沉积SiO_x绝缘层的InGaZnO-TFT的光照稳定性
Ta2O5绝缘层厚度对ZnO基薄膜晶体管器件性能的影响
具有复合空穴传输层的高效低压有机电致发光器件