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中文摘要：
主动驱动平板显示是未来显示技术的主流，TFT是主动驱动平板显示得的关键器件。氧化物半导体TFT被认为是AMOLED最合适的器件。1）本项目以ZnO-TFT入手,研究了氧化物沟道层，氧分压造成的化学比偏离对电学性能的影响。2）研究了不同绝缘层SiO2,Si3N4,Ta2O5 及SiO2/Ta2O5/SiO2(STS)复合绝缘层基的TFT性能，高K介质Ta2O5基TFT 迁移率可达64cm2/Vs.但开关比仅105, 还有较大的转移曲线回线(hysteresis)，影响稳定性。而STS复合绝缘层基的器件，虽迁移率为46cm2/Vs，但开关比增大一个数量级，而且hysteresis减小。比较SiO2,Si3N4基TFT表明界面起着重要作用。对氧化物半导体，氧化物绝缘层能更好匹配。3）通过电容-电压关系，确定沟道层载流子浓度及界面陷阱密度。4）研究了ZnO及IGZO-TFT的偏压稳定性，分析了不稳定的机理. 5)利用全光刻工艺，采用Al/Ni源漏电极，解决etching stopper等问题，制成了IGZOTFT-OLED 矩阵，实现了IGZOTFT 控制的OLED发光。
结论摘要：
英文主题词ZnO-TFT, IGZO-TFT, Stacked insulator, Bias-voltage stress stability, IGZOTFT-OLED matrix penal.
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期刊论文
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